| 摘要 |
<p>An insulated gate semiconductor device is provided to make each corner of the outermost circumference of a first channel region have uniform curvature by forming a first chip pattern region made of a quadrangular shape. A semiconductor layer of a conductivity type is formed on a semiconductor substrate of a conductivity type. A first operation part(21) is formed on the semiconductor layer. A second operation part(22) is formed on the semiconductor layer, separated from the first operation part and having a smaller area than that of the first operation part. A first channel region(3) of an opposite conductivity type is formed in the first operation part. A first transistor(15m) of an insulated gate type is formed in the first operation part. A second channel region(4) of an opposite conductivity type is formed in the second operation part. A second transistor(15s) of an insulated gate type is formed in the second operation part. The outer circumference of the second operation part is completely surrounded by the first operation part. The first channel region can be disposed as a quadrangular shape in the first operation part wherein the curvature of each corner of the quadrangular shape is uniform.</p> |
