发明名称 BAND-GAP REFERENCE VOLTAGE BIAS FOR LOW VOLTAGE OPERATION
摘要 A band-gap reference voltage generator for low voltage operation is provided to supply a stable reference voltage regardless of voltage or temperature variation at a voltage below 1V for low voltage operation design. A first and a second PMOS transistor(M1,M2) have a gate and a source connected to a first node and a power supply voltage port in common and a drain connected to a second and a third node, which are formed as a current mirror. A third and a fourth PMOS transistor(M3,M4) have a gate and a source connected to the first node and the power supply voltage port in common and a drain connected to a fourth and a fifth node. A feedback amplifier(AMP) has a non-inversion port and an inversion port connected to the second and the third node and an output port connected to the first node. A first resistor(R1) is connected between the third node and a sixth node. A second resistor(R2) is connected between the fifth node and a ground. A first, a second and a third bipolar transistor(Q1,Q2,Q3) have an emitter connected to the second, the sixth and the fourth node, and have a collector and a base grounded. A first and a second device(Z1,Z2) are connected to the fourth and the fifth node serially, and has high impedance capable of blocking current flow to extract an average voltage between the fourth node and the fifth node. The average voltage between the fourth node and the fifth node is used as a reference voltage.
申请公布号 KR100790476(B1) 申请公布日期 2008.01.03
申请号 KR20060123884 申请日期 2006.12.07
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, YOUNG HO;PARK, SEONG SU
分类号 G11C5/14 主分类号 G11C5/14
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