| 摘要 |
<p>A method for manufacturing and reading a flash memory device is provided to secure a channel length and to reduce leakage current by forming an offset layer on an entire structure and forming a junction region within a semiconductor substrate. A plurality of gate patterns are formed on a semiconductor substrate(100). An offset layer(107) is formed on an entire structure including the gate patterns. An ion implantation process is performed on the entire structure in order to form a junction region(108) within the semiconductor substrate between the gate patterns. The junction region is formed in order not to be overlapped with edges of the gate patterns. The gate patterns are formed with a stacked structure of a tunnel oxide layer(101), a conductive layer(102) of floating gate, a dielectric layer(103), a conductive layer(104) for control gate, a metal electrode layer(105), and a hard mask pattern(106).</p> |
