| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a manufacturing yield of a semiconductor device and miniaturize the semiconductor device. <P>SOLUTION: In the manufacturing method of the semiconductor device, a semiconductor chip 2 is mounted to each of semiconductor device regions 32a of a multi-cavity wiring substrate 31 having the plurality of semiconductor device regions 32a and wire bonding is executed, and then, a sealing resin 5a is collectively formed on the semiconductor device regions 32a. Then, a target mark for dicing is formed on an upper surface 5b for the sealing resin 5a based on a target mark previously formed on the upper surface 31a of the wiring board 31, half-dicing is executed from the upper surface side of the sealing resin 5a based on the target mark for dicing, thereby forming a groove 38 having a bottom reaching the wiring board 31. After that, a solder ball 6 is connected to the bottom surface 31b of the wiring board 31, and then, dicing is executed from the bottom surface 31a side of the wiring board 31, and the board is fragmentated into individual semiconductor devices. <P>COPYRIGHT: (C)2008,JPO&INPIT |
