| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for applying stress to a channel region effectively within the range of the critical film thickness of a mixed crystal layer, and forming a film-like silicide layer at the surface side of the mixed crystal layer; and to provide the semiconductor device. SOLUTION: The manufacturing method comprises: a first process for forming a gate electrode 13 on a silicon substrate 11 via a gate insulation film 12; a second process for digging down the surface layer of the silicon substrate 11, by etching with the gate electrode 13 as a mask; and a third process for growing an SiGe layer 21 epitaxially on the dug surface of the silicon substrate 11. In the third process, the SiGe layer 21 is grown epitaxially so that Ge is contained while it has a concentration gradient that becomes high from the side of the silicon substrate 11 toward the center of the SiGe layer 21, and becomes low from the center toward the surface of the SiGe layer 21. The semiconductor device can be obtained by the manufacturing method. COPYRIGHT: (C)2008,JPO&INPIT
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