AMORPHOUS ZNO BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

An amorphous ZnO based thin film transistor and a method of manufacturing the same are provided to improve a photo sensitivity by controlling content of a gallium oxide and an indium oxide. An amorphous ZnO based thin film transistor includes a substrate(10), an active layer(11), a source electrode(12s), a drain electrode(12d), a gate electrode, and a gate insulation layer(13). The active layer(11) includes an amorphous ZnO based complex semiconductor expressed by a chemical equation that is x(Ga2O3).y(In2O3).z(ZnO) and 1.15<=x/z<=2.05, 1.15<=y/z<=1.70. The source electrode(12s) and the drain electrode(12d) contact with the active layer(11). The gate electrode forms an electric field in the active layer(11). The gate insulation layer(13) is interposed between the gate electrode and the active layer(11).