| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory element connected to the edge part of a thin film electrode, and to provide a method of manufacturing the same. <P>SOLUTION: A phase change memory (PCM) cell structure includes a first electrode 60E, a phase change element 70E, and a second electrode 80E, wherein the phase change element 70E is inserted between the first electrode 60E and the second electrode 80E, and only an edge part 75 of the first electrode 60E is contacted with the phase change element 70E, thereby reducing a contact area between the phase change element 70E and the first electrode 60E to increase a current density flowing through the phase change element 70E and effectively cause a phase change by a first programming power by a comparatively small current. <P>COPYRIGHT: (C)2008,JPO&INPIT |
