| 摘要 |
PROBLEM TO BE SOLVED: To provide an oscillator which has a small size and a wide-band width, while the variations in the characteristic oscillation frequency is small with respect to a process, and to provide an electrical signal processing element. SOLUTION: On a silicon substrate 2, the thin-film tuning fork type bending oscillator 1 is installed, in parallel to the surface of the silicon substrate 2. The thin film tuning fork type bending oscillator 1 is constituted of two oscillation parts, an exciting part which excites the oscillation part, a supporting part 1-4 fixed to the silicon substrate 2, and a plinth part for isolating oscillation energy stored in the oscillation parts and the exciting part from the supporting part 1-4. More specifically, the thin film tuning fork type bending oscillator 1 has a tuning fork type bending oscillator where a thin film made of piezoelectric material is deposited on a substrate on which lower electrodes are formed, and where upper electrodes are formed on the piezoelectric thin film. On the silicon substrate 2, an oscillator using a CMOS inverter e.g. is formed. COPYRIGHT: (C)2007,JPO&INPIT
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