| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit occurrence of a white scratch by reducing effectively a dark current without giving a bad influence on a performance clearing a stored charge by an overflow drain, in a solid state imaging element of a vertical overflow drain structure corresponding to colorization. <P>SOLUTION: In response to a wavelength of light, the depth of a first conductive layer (160, 162, and 164) is optimized for constituting a photodiode, a first conductive layer (162, 164) of a photodiode is shallowly formed for receiving each light of green (G) and blue (B) of short wavelength, and it eliminates a useless structure. Moreover, directly under the photodiode for the green (G) and the blue (B), additional overflow barrier layer (121, 123) is formed, and the difference is reduced in height of potentials of overflow barriers. <P>COPYRIGHT: (C)2007,JPO&INPIT |
