| 摘要 |
PROBLEM TO BE SOLVED: To obtain a different pinch-off voltage Vp with improved reproducibility regardless of wet etching by the selective etching of an InGaP layer and an AlGaAs layer. SOLUTION: In a compound semiconductor switching circuit device, a substrate is used having two layers of InGaP layers for stopping etching. By using the selective etching of the InGaP layer and the AlGaAs layer, two kinds of pinch-off voltages can be realized with improved reproducibility. Although a buried gate electrode structure is used for two types of HEMT gate electrodes 127, 128, a breakdown voltage can be improved greatly by performing control so that Pt is not diffused to the InGaP layer. COPYRIGHT: (C)2007,JPO&INPIT
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