| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of preventing a variation in the resistance value of a variable resistive element of a non-selective memory cell adjacent to a selective memory cell by controlling the diffusion of heat generated in the variable resistive element into the selective memory cell. <P>SOLUTION: The nonvolatile memory device is constituted by arranging a plurality of memory cells 10 each comprising a variable resistive elements 2 which can store information. When applying electric stress to one of two adjacent memory cells via an electric insulator and the changing resistance value of the variable resistive element, a heat diffusion prevention object controllable in change in the resistance value of the variable resistive element of the other memory cell is provided into a heat diffusion course by diffusing generated heat to the variable resistive element of the other memory cell via a heat diffusion passage including a conductive wiring material with higher thermal conductivity than that of the electric insulator. <P>COPYRIGHT: (C)2007,JPO&INPIT |
