发明名称 Wafer level packaging cap and fabrication method thereof
摘要 A fabrication method of a wafer level packaging cap for covering a device wafer provided with a device thereon, includes forming an insulating layer on a wafer; removing a predetermined part of the insulating layer and exposing an upper surface of the wafer; forming a cap pad extending from an upper surface and the exposed surface of the wafer; forming a cavity on a lower surface of the wafer corresponding to the cap pad; etching a bottom surface of the cavity and exposing the cap pad which is connected to the wafer through the cavity; and forming metal lines extending from the lower surface of the wafer and the cavity, to electrically connect the cap pad which is exposed through the cavity.
申请公布号 US2007164410(A1) 申请公布日期 2007.07.19
申请号 US20060491086 申请日期 2006.07.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM YONG-SUNG;KIM WOON-BAE;JUNG KYU-DONG;LEE CHANG-SEUNG
分类号 H01L23/02 主分类号 H01L23/02
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