| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, where in order to maintain/improve performance while promoting micronization for a high integration of LSI, a gate insulating film of high dielectric constant, with proper interface characteristics, is required. SOLUTION: A field effect transistor, as well as a method of manufacturing the field effect transistor, are provided: which includes a gate insulating film 33 where a silicide film or a silicate film of two mono layers or less on an Si substrate 31, over which an insulating film is laminated; and which includes a gate insulating film where after an Si surface is terminated with a silicide film and a silicate film of two mono layers or less, an insulating film is laminated. COPYRIGHT: (C)2007,JPO&INPIT
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