| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electronic device which is excellent in characteristics and capable of preventing the characteristics from deteriorating with time in the air, an electronic device manufacturing method, and electronic equipment. <P>SOLUTION: A thin-film transistor 1 has a source electrode 20a and a drain electrode 20b; an organic film 60 formed on the surfaces of the source electrode 20a and the drain electrode 20b; an organic semiconductor layer 30 provided so as to cover the source electrode 20a and the drain electrode 20b, and to contact the organic film 60; a gate insulation layer 40 formed on the organic semiconductor layer 30; and a gate electrode 60 provided on the gate insulation layer 40. Preferably, the organic film 60 is formed by coupling a non-conjugated system organic compound represented by a general formula: CF<SB>3</SB>(CF<SB>2</SB>)<SB>m</SB>(CH<SB>2</SB>)<SB>n</SB>CH(CH<SB>2</SB>SH)<SB>2</SB>(where, m denotes an integer 1-35 and n denotes an integer 2-33) to the surfaces of the source electrode 20a and the drain electrode 20b. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
