| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel storage device which employs a principle entirely different from a conventional FeRAM that uses hysteresis characteristics of polarizing inversion. SOLUTION: The storage device comprises a lower electrode 10, a ferroelectric layer 12 formed above the lower electrode 10, a charge compensation layer 14 which is formed above the ferroelectric layer 12 and comprises an oxide having different composition from the ferroelectric layer, and an upper electrode formed above the charge compensation layer 14. The upper electrode comprises a saturation polarization forming electrode 22 for forming a domain saturated and polarized in a specified direction, a writing electrode 24 arranged apart from the saturation polarization forming electrode 22, and a reading electrode 26 arranged apart from the writing electrode 24 in a specified region of the ferroelectric layer 12. COPYRIGHT: (C)2007,JPO&INPIT
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