| 发明名称 |
Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs |
| 摘要 |
A process for is provided for synthesizing a compound having the formula E(GeH<SUB>3</SUB>)<SUB>3 </SUB>wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH<SUB>3</SUB>Br and [CH<SUB>3</SUB>)<SUB>3</SUB>Si]<SUB>3</SUB>E are combined under conditions whereby E(GeH<SUB>3</SUB>)<SUB>3 </SUB>is obtained. The E(GeH<SUB>3</SUB>)<SUB>3 </SUB>is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH<SUB>3</SUB>)<SUB>3 </SUB>can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
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| 申请公布号 |
US7238596(B2) |
申请公布日期 |
2007.07.03 |
| 申请号 |
US20050559980 |
申请日期 |
2005.12.08 |
| 申请人 |
ARIZONA BOARD OF REGENTA, A BODY CORPORATE OF THESTATE OF ARIZONA ACTING FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY |
发明人 |
KOUVETAKIS JOHN;BAUER MATTHEW;TOLLE JOHN;COOK CANDI |
| 分类号 |
H01L21/20;C01G17/00;H01L;H01L21/22;H01L21/225;H01L21/38 |
主分类号 |
H01L21/20 |
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