| 摘要 |
A film formation apparatus, an operation method thereof and a memory medium for executing the method are provided to prevent the generation of particles due to attachment of a reaction container when a nitride silicon layer is formed on a substrate. A process gas is supplied into a reaction container(2) receiving plural substrates, and simultaneously, the reaction container is heated using a heater(51), thereby forming a silicon nitride layer on the substrate. A substrate holding support for holding the substrates with silicon nitride layer is withdrawn from the reaction container through an entrance of the reaction container. A substrate holding support for holding new substrates is introduced into the reaction container, and the entrance is closed and sealed.
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