FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT

摘要

A field plate trench transistor having a semiconductor body is disclosed. In one embodiment, the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.