| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a dielectric element which can sufficiently reduce leak current density of a dielectric element by using a material having a low oxidation temperature as an upper electrode. SOLUTION: A dielectric 14 is formed on a lower electrode 12 to form a first stacked structure 15. Next, the first stacked structure 15 is annealed. Subsequently, the upper electrode 16 is formed on the dielectric 14 to form a second stacked structure 17. After that, the second stacked structure 17 is annealed at a temperature of not less than 150°C in a depressurized atmosphere 25b. In order to prevent evaporation of the lower electrode 12 and the upper electrode 16, the annealing of the second stacked structure 17 is preferably executed at a temperature of not more than 450°C. COPYRIGHT: (C)2007,JPO&INPIT |
