DRY-ETCHING METHOD AND ITS EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a dry-etching method and its equipment for manufacturing a very accurate device with an etching cross section highly symmetrical in the plane of a wafer. SOLUTION: A DC current is caused to flow in a coil 9 arranged outside a treatment chamber 14 to generate a magnetic field inside the treatment chamber 14. While controlling the deflection of plasma ions by the action of the magnetic field, an etched object 1 is etched vertically to the plane thereof. COPYRIGHT: (C)2007,JPO&INPIT