发明名称 SUBSTRATE PROCESSING METHOD
摘要 <p>A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching- target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.</p>
申请公布号 SG131052(A1) 申请公布日期 2007.04.26
申请号 SG20060062400 申请日期 2006.09.14
申请人 TOKYO ELECTRON LIMITED 发明人 FUJII YASUSHI;TOSHIMA TAKAYUKI;ORII TAKEHIKO
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