发明名称 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
摘要 |
An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a crystalline semiconductor film with high quality equivalent to a single crystal. A first crystalline semiconductor film and a second crystalline semiconductor film are formed overlying a substrate, which integrally structure a crystalline semiconductor layer. The first and second crystalline semiconductor films are polycrystalline bodies aggregated with a plurality of crystal grains. However, the crystal grains are aligned toward a (101)-plane orientation at a ratio of 30 percent or greater, preferably 80 percent or greater. Also, relying on a plane orientation of the crystal grains in the first crystalline semiconductor film, the second crystalline semiconductor film has a plane orientation also aligned in the same direction with a probability of 60 percent or higher. |
申请公布号 |
US7196400(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20040835077 |
申请日期 |
2004.04.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MITSUKI TORU;KASAHARA KENJI |
分类号 |
G02F1/1368;H01L29/04;H01L21/00;H01L21/20;H01L21/322;H01L21/324;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01L31/036;H01L31/117;H01L31/20 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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