| 摘要 |
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including forming on a semiconductor substrate an insulating film having a recessed portion in a surface thereof, forming on the insulating film a first metal film so as to fill up the recessed portion, forming on the first metal film a second metal film having lower vacancy density than that of the first metal film, forming on the second metal film a compression stress applying film which applies compression stress to the first metal film through the second metal film when heat treatment is applied, performing heat treatment on the first metal film, the second metal film and the compression stress applying film, and removing the second metal film and the first metal film except a portion thereof filling up the recessed portion to thereby form a wiring in the recessed portion.
|
