Non-Volatile Memory Devices Having L-Shaped Floating Gate Electrodes and Methods of Forming Same

摘要

A flash EEPROM array includes a first row of EEPROM cells having a first floating gate electrode therein and a second row of EEPROM cells having a second floating gate electrode therein. The first floating gate electrode includes at least one horizontal segment and at least one vertical segment, which collectively define a first L-shaped portion of the first floating gate electrode that faces a first direction. The second floating gate electrode includes at least one horizontal segment and at least one vertical segment that collectively define a second L-shaped portion of the second floating gate electrode that faces a second direction opposite the first direction.