SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form an oxide layer with low metal impurity concentration on the surface of a semiconductor layer employing a chemically stable semiconductor such as silicon carbide. SOLUTION: The manufacturing method of a semiconductor element comprises a process (A) of cleaning the surface of the semiconductor layer 12 consisting of a wide band gap semiconductor using gas containing a halogen group element, and a process (B) of forming an oxide layer 14 on the surface of the semiconductor layer 12. COPYRIGHT: (C)2007,JPO&INPIT