MEMORY ELEMENT AND MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a memory element capable of easily patterning even if microfabricated and improving spin injection efficiency. SOLUTION: Magnetization fixed layers 31 and 32 provided on and under a memory layer 17 for keeping information by magnetization of a magnetic body are both constituted of a plurality of ferromagnetic layers laminated via non-magnetic layers. The orientations of the magnetization of the respective ferromagnetic layers are alternate. At least the layer 32 on the memory layer 17 has orientations of magnetization M19 and M21 fixed by the structure including a plurality of ferromagnetic layers laminated via the non-magnetic layers. With a current flowing in the lamination direction and spin-polarized electrons injected, the orientation of the magnetization M1 of the memory layer 17 changes to constitute the memory element 3 on which the information is recorded. COPYRIGHT: (C)2007,JPO&INPIT