发明名称 |
Monitoring method for production of linkage structures and contacts in a semiconductor component forms contact lead-throughs in a dielectric layer to link to a test surface |
摘要 |
<p>Several contact lead-throughs (110A,110B) are formed in a dielectric layer (103) so as to produce a connection with a test surface. A contact lead-through is created in a dielectric layer so as to produce an electric connection with a conductive region (102) formed in a semiconductor component. Test data is picked up from a test surface and its priorities are assessed. An independent claim is also included for a semiconductor structure.</p> |
申请公布号 |
DE102005041283(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
DE20051041283 |
申请日期 |
2005.08.31 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
LEHR, MATTHIAS;FROHBERG, KAI;SCHUEHRER, HOLGER |
分类号 |
H01L23/544;H01L21/28;H01L21/66 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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