发明名称 Monitoring method for production of linkage structures and contacts in a semiconductor component forms contact lead-throughs in a dielectric layer to link to a test surface
摘要 <p>Several contact lead-throughs (110A,110B) are formed in a dielectric layer (103) so as to produce a connection with a test surface. A contact lead-through is created in a dielectric layer so as to produce an electric connection with a conductive region (102) formed in a semiconductor component. Test data is picked up from a test surface and its priorities are assessed. An independent claim is also included for a semiconductor structure.</p>
申请公布号 DE102005041283(A1) 申请公布日期 2007.03.01
申请号 DE20051041283 申请日期 2005.08.31
申请人 ADVANCED MICRO DEVICES INC. 发明人 LEHR, MATTHIAS;FROHBERG, KAI;SCHUEHRER, HOLGER
分类号 H01L23/544;H01L21/28;H01L21/66 主分类号 H01L23/544
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