METHOD OF MANUFACTURE SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a trench type element isolation structure wherein no recess develops in the edge part of an embedded oxide film of the trench type element isolation.

SOLUTION: The method includes the steps of: forming a non-single crystal silicon film on a silicon substrate through an underlying oxide film and thereafter forming a silicon nitride film; forming a groove extending from the surface of the silicon nitride film to the inside of the silicon substrate; forming a thermal oxide film on the surface inside the groove and at a side wall of the non-single crystal silicon film, the thermal oxide film being outwardly protruded at a boundary face between the underlying oxide film and the silicon nitride film; depositing the embedded oxide film; reducing the film thickness of the embedded oxide film by using the silicon nitride film as a stopper; leaving the embedded oxide film in the inside of the groove and thereafter removing the silicon nitride film; removing the non-single crystal silicon film; applying wet etching to the underlying oxide film; forming an isolation film on the surface of the silicon substrate; forming a conductive film; and forming a gate electrode by patterning the conductive film.

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