| 摘要 |
<p>Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate (40), a transistor (42s,42d,44) formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes: a lower electrode (46) connected to the substrate; a first phase change layer (50) formed on the lower electrode; a first barrier layer (52) overlying the first phase change layer; a second phase change layer (54) overlying the first barrier layer; and an upper electrode (60) formed on the second phase change layer.
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