| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which level difference in each region on an interlayer insulating film formed on an interconnect line by polishing can be reduced even if a dense region and a sparse region exist in the interconnect line formed on a semiconductor substrate. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a second interlayer insulating film 15 on a first interlayer insulating film 13 which is formed in a first region 16 on a semiconductor substrate 12 where aluminum interconnect lines 14 are formed densely and a second region 17 where aluminum interconnect line 14 is not formed, a step for implanting and diffusing impurities 23 into a protruding portion 15b above the first region 16 on the second interlayer insulating film 15 in order to increase polishing rate, and a step for planarizing the upper surface of the second interlayer insulating film 15 including the protruding portion 15b by CMP. COPYRIGHT: (C)2007,JPO&INPIT
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