| 摘要 |
<p>The invention relates to a novel solution for removing post-etch- residue, having improved properties, and to the use thereof in the production of semi-conductors. The invention also relates to an aqueous solution having a reduced etching rate in relation to metallisations and in relation to surfaces, which must be released from post-etch residues and particles during the production process of semi-conductors. ® KIPO & WIPO 2007</p> |
