| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface processing method capable of forming a rough surface at atom level, a capacitor structure capable of significantly improving capacity per a unit area, a manufacturing method thereof, and an electronic device. SOLUTION: A halogen radical (chlorine radical) is generated from a material (chlorine) containing halogen, near the surface of a porous film 110 which is formed on the surface of a silicon substrate 101 and comprises micropores at atom level. By making the halogen radical (chlorine radical) collide with the surface of the silicon substrate 101 through the micropores of the porous film 110, a rough surface 101a at atom level is formed on the silicon substrate 101. COPYRIGHT: (C)2007,JPO&INPIT
|
