发明名称 Process for separating layers of material
摘要 The method for separating two layers of material according to a fragility surface defined between the two layers includes a thermal or heat treatment of a structure comprising the two layers. The treatment brings the temperature at the start of the treatment to a temperature at the end of the treatment. In the course of the thermal treatment the temperature is changed in a first phase up to a transition temperature, and then in a second phase the temperature increase per unit of time is higher than in the first phase. The transition temperature corresponds to the start of the separation of layers, and is of the order of 430-450 degrees C. The first phase is the phase of initiating the separation, and the second phase is that of finishing the state of the surface. The second phase is followed by a plateau of heating at a substantially constant temperature, which is the temperature at the end of the treatment. During the first phase the temperature increases according to an average slope of about 10 degrees C/min, and during the second phase the temperature increases according to a higher slope, which is about 15-16 degrees C/min. The temperature at the start of the treatment is below or equal to 350 degrees C. The temperature at the end of the treatment is in the range 500-800 degrees C, including 600 degrees C. Applications of the method are claimed and include the separation of two layers of material demarcated by a fragility surface implemented in the framework of SMARTCUT method, the two layers comprising a layer of silicon, and the two layers of silicon where one corresponds to a silicon-on-insulator (SOI) layer and the other is a remainder of silicon.
申请公布号 SG127693(A1) 申请公布日期 2006.12.29
申请号 SG20030002516 申请日期 2003.04.30
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 SCHWARZENBACH WALTER;MALEVILLE CHRISTOPHE
分类号 H01L27/12;H01L21/02;H01L21/18;H01L21/30;H01L21/301;H01L21/762 主分类号 H01L27/12
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