| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field effect transistor having a structure capable of utilizing a field plate effect. <P>SOLUTION: A conductive gallium nitride substrate 13 comprises a first region 13c having first dislocation density, and a second region 13d having second dislocation density smaller than the first dislocation density. A gate electrode 17 is provided on a second part 15d of a gallium nitride base semiconductor region 15. A drain electrode 19 is provided on the second part 15d of the semiconductor region 15. A source electrode 21 is provided on the semiconductor region 15, and connected to the second part 15d of the semiconductor region 15. The dislocation density of the first part 15c of the semiconductor region 15 is larger than that of the second part 15d of the gallium nitride base semiconductor region 15. The conductivity of the first part 15c of the semiconductor region 15 is larger than that of the second part 15d of the semiconductor region 15. The source electrode 21 is connected to the first part 15c of the semiconductor region 15. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
