NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride based semiconductor light emitting device and its manufacturing method are provided to improve a light extracting efficiency by extending the area of a P type electrode pad portion using a P type electrode pad spaced apart from a mesa line. A nitride based semiconductor light emitting device comprises a substrate(201), an N type nitride semiconductor layer(202) on the substrate, an active layer and a P type nitride semiconductor layer(204) on the N type nitride semiconductor layer, a transparent electrode(205) on the P type nitride semiconductor layer, a P type electrode pad(206) on the transparent electrode, an N type electrode pad(207) on the N type nitride semiconductor layer. The P type electrode pad is spaced apart from an outer edge line of the P type nitride semiconductor layer as much as 50 to 200 mum.