发明名称 Use of DC magnetron sputtering systems
摘要 A DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target that comprises at least one sidewall; a plasma ignition arc; and a catch-ring coupled to and located around the shield. Another DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Yet another DC magnetron sputtering system is described herein that comprises an anodic shield comprising at least one protrusion; a cathodic target comprising at least one recess, cavity or a combination thereof; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the at least one protrusion coupled to the anodic shield and the at least one protrusion, recess or cavity. Methods are also provided whereby the gas turbulence effect is mitigated, such methods including providing an anodic shield; providing a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Additional methods include providing an anodic shield; providing a cathodic target that comprises at least one sidewall; providing a catch-ring coupled to and around the shield; and initiating a plasma ignition arc.
申请公布号 US2006278520(A1) 申请公布日期 2006.12.14
申请号 US20050150900 申请日期 2005.06.13
申请人 LEE EAL H;PRATER ROBERT M;TRUONG NICOLE M;KIM JAEYEON 发明人 LEE EAL H.;PRATER ROBERT M.;TRUONG NICOLE M.;KIM JAEYEON
分类号 C23C14/32;C23C14/00 主分类号 C23C14/32
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