摘要 |
PROBLEM TO BE SOLVED: To provide a gate circuit of voltage driving transistor advantageous in terms of dimensions and cost. SOLUTION: The gate circuit 1 includes a charging circuit 10 and a drive circuit 20 as separate circuits. When IGBT 2 is turned on, the following procedure is taken: the charging circuit 10 charges the gate capacitance 2a of the IGBT 2; and after the gate capacitance 2a is charged, the drive circuit 20 supplies driving voltage to the gate of the IGBT 2. COPYRIGHT: (C)2007,JPO&INPIT
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