发明名称 Buried word line memory integrated circuit system
摘要 An integrated circuit system includes providing a semiconductor substrate and forming buried word lines in the semiconductor substrate with the buried word lines including vertical charge-trapping dielectric layers. The system further includes forming bit lines further comprising forming in-substrate portions in the semiconductor substrate, and forming above-substrate portions over the semiconductor substrate.
申请公布号 US7141838(B1) 申请公布日期 2006.11.28
申请号 US20050045694 申请日期 2005.01.27
申请人 SPANSION LLC 发明人 BRENNAN MICHAEL
分类号 H01L27/148 主分类号 H01L27/148
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