| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus capable of forming crystalline silicon without a separate post-thermal treatment. SOLUTION: The apparatus includes a chamber 30 for forming a thin film on a substrate 38, a shower head 32 that is provided at the top of the chamber 30 and jets reaction gas onto the substrate 38, a diffusing device 34 where diffusing holes 34a for evenly diffusing the reaction gas are formed, a catalytic thermal beam section 36 for heating the reaction gas injected through the diffusing holes 34a of the diffusing device 34 to decompose it into an ion or radical state, a chuck 39 on which the substrate 38 is mounted, a discharging outlet 31 for discharging the reaction gas, and a double-wall 42 that configures a side wall inside the chamber 30 and is provided with a heating section 42a for suppressing the generation of particles. COPYRIGHT: (C)2007,JPO&INPIT
|
