| 摘要 |
A method for forming a tungsten silicide thin film is provided to reduce the resistivity of the tungsten silicide thin film(WSix) and to reduce the resistance of a word line by changing the composition rate of Si/W. An amorphous tungsten silicide layer(42) is deposited on a polysilicon layer(41) by CVD using a Si source gas and a W source gas. A crystalline tungsten silicide thin film(43) is formed by annealing the amorphous tungsten silicide layer. At the time, in first deposition processing, a Si-rich tungsten silicide is deposited by using high flow rate of the Si and the W source gases. In second deposition processing, a W-rich tungsten silicide is deposited by using a relatively low flow rate of the Si and the W source gases.
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