发明名称 Feature optimization using interference mapping lithography
摘要 Disclosed concepts include a method of, and program product for, optimising an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
申请公布号 SG125970(A1) 申请公布日期 2006.10.30
申请号 SG20040007336 申请日期 2004.12.10
申请人 ASML MASKTOOLS B.V. 发明人 SOCHA ROBERT;SHI XUELONG;BROEKE VAN DEN DOUGLAS;CHEN JANG FUNG
分类号 G03F1/00;G03F1/36;G03F7/20;H01L21/027 主分类号 G03F1/00
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