| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase resolution in a pattern even in an end portion of a line-and-space pattern, and to suppress decrease in a lithographic margin or increase in a CAD processing time. <P>SOLUTION: The photomask having a pattern to be transferred into an integrated circuit by exposure includes a first device pattern 10 where lines and spaces are alternately arranged at a fixed pitch of a predetermined spacing in one direction, a second device pattern 20 laid as separated from the end of the first device pattern 10 in the arrangement direction and having a width as three times or more in an odd number as the fixed pitch, a dummy pattern 30 laid between the first and second device patterns 10, 20 and having lines and spaces alternately arranged at a fixed pitch giving no influence on circuit operation, and auxiliary pattern 21a, 22a laid in the second device pattern 20 at a fixed pitch and not resolved by exposure. <P>COPYRIGHT: (C)2007,JPO&INPIT |
