| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device where coverage of a seed layer for electrolytic plating is made sufficient even in a product having a passivation film and a protection film, and uniform bump electrodes can be formed, and to provide a manufacturing method of the device. <P>SOLUTION: The passivation film 14 includes protrusions 141 and 142 where at least a peripheral edge of an electrode pad 12 and a shape of a guard ring 13 are reflected. The protection film 15 of a resin system is formed from an external side of the protrusion 141 by the peripheral edge of the electrode pad 12 to a region on the inner side of the protrusion 142 by the guard ring 13 on the passivation film 14. Peripheral regions 143 and 144 by the passivation film 14 are regions where the protection film 15 is not extended. The peripheral regions 143 and 144 are installed for improving coverage of the seed layer for electrolytic plating. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
