| 摘要 |
A method for forming a dual gate in a semiconductor device is provided to improve the capability of a semiconductor device by forming a stack structure of a silicon-rich tungsten silicide thin film and an amorphous polysilicon thin film between a polysilicon layer and a tungsten silicide layer. An isolation layer(110), an N-type well region(120) and a P-type well region(130) are formed on a semiconductor substrate(100). A gate oxide layer and a polysilicon layer are formed on the resultant structure. A first photoresist layer pattern is formed on the P-type well region, and P-type impurities are implanted into the polysilicon layer in the N-type well region by using the first photoresist layer pattern as a mask. A second photoresist layer pattern is formed on the N-type well region, and N-type impurities are implanted into the polysilicon layer in the P-type well region by using the second photoresist layer pattern as a mask. After a tungsten silicide thin film and an amorphous polysilicon thin film are formed on the resultant structure, a tungsten silicide layer is formed. A hard mask nitride layer and an ARC(anti-reflective coating) are formed on the resultant structure. The gate oxide layer, the polysilicon layer, the tungsten silicide thin film, the amorphous polysilicon thin film and the tungsten silicide layer are patterned to form dual gate electrodes(230,240) on the N-type and P-type well regions, respectively.
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