发明名称 INTEGRATED SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an integrated semiconductor laser element which can improve a characteristic of a laser beam and reduce cost for optical axis adjustment and whose degree of freedom on an applying method of voltage is high. SOLUTION: The integrated semiconductor laser element is provided with a violet laser element 110 comprising a light emitting point 13 and having a projection 18 for positioning, and a red laser element 120 comprising a light emitting point 34 and having a recess 38 for positioning. The projection 18 for positioning the violet laser element 110 is engaged with the recess 38 for positioning the red laser element 120, in a state where an insulating film 12 and a solder layer 115a are installed between a p-side electrode 10 of the violet laser element 110 and a p-side electrode 31 of the red laser element 120. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278578(A) 申请公布日期 2006.10.12
申请号 JP20050093234 申请日期 2005.03.28
申请人 SANYO ELECTRIC CO LTD 发明人 IZU HIROAKI;YAMAGUCHI TSUTOMU;OTA KIYOSHI;HATA MASAYUKI
分类号 H01S5/40 主分类号 H01S5/40
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