HIGH DENSITY INTERCONNECTION DEVICE WITH DIELECTRIC COATING

摘要

A high-density interconnection device or connector (1) that is formed with wafer in a stacked arrangement. The stack of wafers (20) is arranged to include signal wafers (20b) that alternate with shield wafers (20a). A dielectric coating (40) is applied to at least one body surface of one or more of the wafer to prevent electrical bridging between the adjacent signal and shield wafers (20a, 20b), e.g. when conductive debris is lodged between the wafers (20).