| 摘要 |
PROBLEM TO BE SOLVED: To provide a sufficient image characteristic in a CMOS sensor that uses an n-type substrate. SOLUTION: An embedded photodiode 14 and a p-type well region 15 are formed in the surface region of a surface part 11b of the n-type substrate 11. Respective gates 17, 18 and 19 of a scanning transistor are installed on the surface of the p-type well region 15. N-type diffusion layers 20a, 20b, 20c and 20d are formed in the surface region of the p-type well region 15, other than the respective gates 17, 18 and 19. A reading gate 21 is installed on the n-type substrate 11 between the embedded photodiode 14 and the p-type well region 15. A p-type diffusion layer 22 is formed in the surface 11b of the n-type substrate 11, which corresponds to a detector 31 between the p-type well region 15 and the reading gate 21. COPYRIGHT: (C)2006,JPO&NCIPI
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