| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate of high aperture ratio capable of preventing an electrical short circuit between a pixel electrode and an auxiliary capacitive electrode. SOLUTION: A gate wiring 2 and an auxiliary capacitive electrode 3 are formed on an insulating substrate 1, and a hole 3h is formed in the auxiliary capacitive electrode 3. A first interlayer insulation film 5 is formed so as to cover the gate wiring 2 and the auxiliary capacitive electrode 3. A source wiring 9, a semiconductor layer and a drain electrode 10 are formed on the first interlayer insulation film, and a second interlayer insulation film 12 is formed so as to cover them. A contact hole 14 is formed on the second interlayer insulation film 12, and reaches the drain electrode 10 at the portion corresponding to the hole 3h. The pixel electrode 15 formed on the second interlayer insulation film 12 is connected to the drain electrode 10 through the contact hole 14. COPYRIGHT: (C)2006,JPO&NCIPI |
