| 摘要 |
PROBLEM TO BE SOLVED: To make a single semiconductor device correspond to a plurality of kinds of power supply voltages. SOLUTION: In order to reduce channel concentration by forming a pocket region 7 of the same conductivity type as that of a channel region 6 formed between a source region 4 and a drain region 5 in a region close to the source region 4, a region between the source region 4 and the drain region 5 is made into an asymmetric concentration profile, where impurity concentration is high on the side of the source region 4 and low on the side of the drain region 5. Consequently, a current generated by impact ionization, when drain bias is applied is reduced to improve hot carrier resistance by suppressing characteristic deterioration due to the hot carriers, and to enable one semiconductor device to correspond to a plurality of kinds of power supply voltages. COPYRIGHT: (C)2006,JPO&NCIPI
|
