发明名称 Method of forming a metal film, semiconductor device and wiring board
摘要 A method of forming a metal film on the surface of a resin substrate by forming plating nuclei on a resin substrate through a step of catalyzing treatment, a step of accelerating treatment and, then, a step of electrolytic copper plating treatment. Ultraviolet light is irradiated when there exist, in a mixed manner, portions exposing the surface of the resin substrate and the metal copper film formed by the electroless copper plating, to enhance the adhesion between the surface of the resin and the metal copper film. A step of ultraviolet light irradiation treatment is conducted after a step of electroless copper plating treatment. This is followed by an additional step of electroless copper plating treatment.
申请公布号 US7078789(B2) 申请公布日期 2006.07.18
申请号 US20030732259 申请日期 2003.12.11
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 YOSHITANI MASAAKI
分类号 C23C18/20;H01L21/31;C23C18/16;H01L21/28;H01L21/288;H01L21/768;H01L23/12;H05K3/18;H05K3/24;H05K3/38 主分类号 C23C18/20
代理机构 代理人
主权项
地址